By B. I. Halperin (auth.), David J. Lockwood, Aron Pinczuk (eds.)
ISBN-10: 9401048452
ISBN-13: 9789401048453
ISBN-10: 9401119120
ISBN-13: 9789401119122
Remarkable advances in semiconductor progress and processing applied sciences proceed to have a profound impression on condensed-matter physics and to stimulate the discovery of novel optoelectronic results. in depth study at the behaviors of loose vendors has been conducted within the two-dimensional platforms of semiconductor heterostructures and within the one and zero-dimensional platforms of nanostructures created through the state of the art fabrication tools. those stories have exposed unforeseen quantum mechanical correlations that come up as a result of mixed results of robust electron-electron interactions and wave functionality confinement linked to lowered dimensionality. The investigations of those phenomena are at present on the frontiers of condensed-matter physics. They comprise parts just like the fractional quantum corridor influence, the dynamics of electrons on an extremely brief (femtosecond) time scale, electron habit in quantum wires and dots, and stories of electron tunneling phenomena in extremely small semiconductor buildings. Optical recommendations have made very important contributions to those fields lately, yet there was no coherent evaluation of this paintings until eventually now.
The ebook offers an summary of those fresh advancements that might be of curiosity to semiconductor fabrics scientists in college, executive and business laboratories.
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Extra info for Optical Phenomena in Semiconductor Structures of Reduced Dimensions
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J. Lockwood and A. ). Optical Phenomena in Semiconductor Structures of Reduced Dimensions. 29-44. © 1993 Kluwer Academic Publishers. f2x10 em Figure 1. Schematic diagram of the acceptor doped heterostructures. distance (za) is varied between 25 and 40 nm. The acceptor that the influence of the photoexcited hole on the two-dimensional (20) electron layer is an important factor in determining the optical response in this limit. In this paper, we review our recent measurements [18,19] for the radiative recombination of 20 electrons in GaAs-GaAIAs heterostructures with holes bound to acceptors.
BUHMANN,2 G. MARTINEZ? M. B. r FestkiJrperforschung. Heisenbergstrasse 1. D-7000 Stuttgart 80. Germany 2Service National des Champs Intenses. Centre National de la Recherche Scientifique. BP 166X. F-38042 Grenoble Cedex. France 3/nstitute for Solid State Physics. Russian Academy of Science. 142432 Chernogolovka. Russia ABSTRACT. We study the radiative recombination of two-dimensional electrons in GaAs-GaAlAs heterojunctions with holes localised on acceptors in strong magnetic fields. A single magneto-optical method is applied to study the cyclotron, spin, and quasiparticle energy gaps and their dependence on temperature.
Buhmann, W. Joss, K. V. Kukushkin, G. S. Plaut, K. B. Timofeev, Phys. Rev. Lett. 65, 1056 (1990). V. I. Pulsford, K. I. Haug, K. Ploog, H. Buhmann, M. Potemski, G. B. Timofeev, Europhys. , to be published. LV. I. Pulsford, K. I. Haug, K. B. Timofeev, Europhys. F. V. Kukushkin, K. B. I. Filin, JETP Lett. 54, 389 (1991). P. Hawrylak, Phys. Rev. B 45,4237 (1992). V. l Pulsford, K. von Klitzing, K. I. Haug, S. B. Timofeev, Europhys. Lett. 18,63 (1992). M. I. Rashba, JETP Lett. 53,442 (1991). H. H. Rezayi, and D.
Optical Phenomena in Semiconductor Structures of Reduced Dimensions by B. I. Halperin (auth.), David J. Lockwood, Aron Pinczuk (eds.)
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