Shubu Mukherjee's Architecture Design for Soft Errors PDF

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Please refer to Strathis [22] for an in-depth discussion of this subject. Hot Carrier Injection HCI results in a degradation of the maximum operating frequency of the silicon chip. HCI arises from impact ionization when electrons in the channel strike the silicon atoms around the drain–substrate interface. This could happen from one of several conditions, such as higher power supply, short channel lengths, poor oxide interface, or accidental overvoltage in the power rails. The ionization produces electron–hole pairs in the drain.

Nevertheless, its neutron flux is only about half of that 4 Terrestrial neutrons have two other peaks below the one between 10 and 1000 MeV. 01 and 5 MeV. These neutrons could also cause transient faults. Further, thermal neutrons may also arise in semiconductor processes that use the boron-10 isotope. 26 CHAPTER 1 Introduction of New York City, although its GR is eight times higher than that of New York City. The JEDEC standard [13] describes how to map a given terrestrial site to its GR and compute the corresponding neutron flux at that location.

6). Often, these metal atoms from the voided region create an extruding bulge on the metal line itself. EM is caused by electron flow and exacerbated by rise in temperature. As electrons move through metal lines, they collide with the metal atoms. If these collisions transfer sufficient momentum to the metal atoms, then these atoms may get displaced in the direction of the electron flow. The depleted region becomes the void, and the region accumulating these atoms forms the extrusion. Black’s law is commonly used to predict the MeTTF of a group of aluminum interconnects.

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